制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 512 k x 18 |
访问时间 | Access Time | 8.5 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 225 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | CABGA-165 |
封装 | Packaging | Tray |
高度 | Height | 1.2 mm |
长度 | Length | 15 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V65903S85 |
类型 | Type | Synchronous |
宽度 | Width | 13 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 136 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS81284Z18GB-200V | 0 | Renesas Electronics | ||
2 | IS62WV25616ECLL-35TLI-TR | 0 | Renesas Electronics | ||
3 | 5962-8956807ZA | 0 | Renesas Electronics | ||
4 | 71342LA20PFG | 0 | Renesas Electronics | ||
5 | GS8662T06BD-350I | 0 | Renesas Electronics | ||
6 | BR25H640FJ-2CE2 | 0 | Renesas Electronics | ||
7 | MT41K256M16TW-107 AUT:P TR | 0 | Renesas Electronics | ||
8 | IS46R86400D-6BLA1 | 0 | Renesas Electronics | ||
9 | GD25B32CSIG | n/a | 0 | Renesas Electronics | |
10 | GS8662T20BD-450I | 0 | Renesas Electronics | ||
11 | S34SL02G200BHI003 | 0 | Renesas Electronics | ||
12 | GS8128218GD-400 | 0 | Renesas Electronics | ||
13 | AT24C16C-XHM-T | 3440 | Renesas Electronics | ||
14 | MT40A512M16TB-062E IT:J TR | 0 | Renesas Electronics | ||
15 | S25FS256SAGNFI001 | 0 | Renesas Electronics | ||
16 | GS8662D18BD-250 | 0 | Renesas Electronics | ||
17 | MT29F64G08CBABBWPR:B TR | 0 | Renesas Electronics | ||
18 | S25FL512SAGBHBA13 | 0 | Renesas Electronics | ||
19 | MT29F128G08CBCEBL05B3WC1-M | 0 | Renesas Electronics | ||
20 | MT53E1G16D1FW-046 WT:A TR | 0 | Renesas Electronics |