制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 512 k x 18 |
访问时间 | Access Time | 8.5 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 225 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | PBGA-119 |
封装 | Packaging | Reel |
高度 | Height | 2.15 mm |
长度 | Length | 14 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V65903S85 |
类型 | Type | Synchronous |
宽度 | Width | 22 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 1000 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | S25FL128SAGBHI303 | 0 | Renesas Electronics | ||
2 | GS81302Q37GE-318 | 0 | Renesas Electronics | ||
3 | GS8644Z18GE-200I | 0 | Renesas Electronics | ||
4 | 71V424L15YG8 | 0 | Renesas Electronics | ||
5 | SST25VF016B-50-4C-S2AF-T | 0 | Renesas Electronics | ||
6 | GS8342TT38BGD-550I | 0 | Renesas Electronics | ||
7 | SST39VF3202B-70-4C-B3KE | 0 | Renesas Electronics | ||
8 | GS8672T36BGE-333I | 0 | Renesas Electronics | ||
9 | GS81313LT18GK-500 | 0 | Renesas Electronics | ||
10 | MT35XL01GBBA1G12-0SIT | 0 | Renesas Electronics | ||
11 | GS8672T20BGE-500 | 0 | Renesas Electronics | ||
12 | 72V831L10PFG8 | 0 | Renesas Electronics | ||
13 | AT24C16C-XPD-T | 0 | Renesas Electronics | ||
14 | 34AA04T-I/SN | 0 | Renesas Electronics | ||
15 | GS8662T08BGD-400I | 0 | Renesas Electronics | ||
16 | W25R128JWEIQ TR | 0 | Renesas Electronics | ||
17 | SST39SF040-45-4C-WHE-T | 0 | Renesas Electronics | ||
18 | IS49NLC93200-25BLI | 0 | Renesas Electronics | ||
19 | SDINBDA6-256G-XI1 | 0 | Renesas Electronics | ||
20 | S70FS01GSDSBHV213 | 0 | Renesas Electronics |