制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 512 k x 18 |
访问时间 | Access Time | 6.7 ns |
最大时钟频率 | Maximum Clock Frequency | 150 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 345 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | CABGA-165 |
封装 | Packaging | Tray |
高度 | Height | 1.2 mm |
长度 | Length | 15 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V65803S150 |
类型 | Type | Synchronous |
宽度 | Width | 13 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 136 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 71V67903S80BG | 0 | Renesas Electronics | ||
2 | CY7C1347S-166BGC | 0 | Renesas Electronics | ||
3 | GS81280E36GT-250I | 0 | Renesas Electronics | ||
4 | 71016S20PHG8 | 0 | Renesas Electronics | ||
5 | CY14B101LA-ZS45XIT | 0 | Renesas Electronics | ||
6 | GS82564Z36GB-400 | 0 | Renesas Electronics | ||
7 | MT40A1G8SA-062E AIT:E | 0 | Renesas Electronics | ||
8 | GS8662Q08BGD-357I | 0 | Renesas Electronics | ||
9 | SST39VF020-70-4I-NHE | 0 | Renesas Electronics | ||
10 | MT29F4G08ABAFAH4-AATES:F | 0 | Renesas Electronics | ||
11 | MT29F16G08ABABAWP-IT:B TR | 0 | Renesas Electronics | ||
12 | DS1220AB-200+ | 0 | Renesas Electronics | ||
13 | 24LC08BT-E/SN | 0 | Renesas Electronics | ||
14 | GS8662D11BGD-350 | 0 | Renesas Electronics | ||
15 | W987D2HBJX7E TR | 0 | Renesas Electronics | ||
16 | 25LC160B-E/MS | 0 | Renesas Electronics | ||
17 | SST26VF016BEUI-104I/SN | 0 | Renesas Electronics | ||
18 | IS64LF102436B-7.5TQLA3-TR | 0 | Renesas Electronics | ||
19 | S25HL01GTDPBHV030 | 0 | Renesas Electronics | ||
20 | GS81302D20GE-400 | 0 | Renesas Electronics |