制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 512 k x 18 |
访问时间 | Access Time | 7.5 ns |
最大时钟频率 | Maximum Clock Frequency | 133 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 300 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
高度 | Height | 1.4 mm |
长度 | Length | 20 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V65803 |
类型 | Type | Synchronous |
宽度 | Width | 14 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 72 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 11LC080-I/P | 0 | Renesas Electronics | ||
2 | GS832236AB-200IV | 0 | Renesas Electronics | ||
3 | GS8161E18DGD-250 | 0 | Renesas Electronics | ||
4 | GS8160E32DGT-200V | 0 | Renesas Electronics | ||
5 | GS880E18CGT-250I | 0 | Renesas Electronics | ||
6 | S-25A256B0A-J8T2U3 | 0 | Renesas Electronics | ||
7 | GS8256418GB-250I | 0 | Renesas Electronics | ||
8 | 24LC08BT-E/ST | 0 | Renesas Electronics | ||
9 | GS8161Z32DGD-200I | 0 | Renesas Electronics | ||
10 | GS8182Q08BD-250 | 0 | Renesas Electronics | ||
11 | TC58CVG2S0HRAIJ | -- | 250 | Renesas Electronics | |
12 | GS8162Z18DGB-375 | 0 | Renesas Electronics | ||
13 | AT27C2048-55JU | 0 | Renesas Electronics | ||
14 | S25FL256SDSBHV210 | 0 | Renesas Electronics | ||
15 | GS88236CGD-200I | 0 | Renesas Electronics | ||
16 | MT48LC8M16A2B4-6A XIT:L TR | 0 | Renesas Electronics | ||
17 | GS816218DGB-150IV | 0 | Renesas Electronics | ||
18 | GS8322Z36B-225M | 0 | Renesas Electronics | ||
19 | 71V424S10PHG | 0 | Renesas Electronics | ||
20 | GS8342D18BGD-300I | 0 | Renesas Electronics |