制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 256 k x 36 |
访问时间 | Access Time | 7.5 ns |
最大时钟频率 | Maximum Clock Frequency | 133 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 300 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
高度 | Height | 1.4 mm |
长度 | Length | 20 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V65603 |
类型 | Type | Synchronous |
宽度 | Width | 14 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 72 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS81302T19AGD-333 | 0 | Renesas Electronics | ||
2 | GD25Q64CSIG | 2118 | 305 | Renesas Electronics | |
3 | GS880E32CGT-200 | 0 | Renesas Electronics | ||
4 | MT29F2G08ABAEAWP-IT:E | 2年内 | 0 | Renesas Electronics | |
5 | SST39LF802C-55-4C-B3KE | 0 | Renesas Electronics | ||
6 | GS8662QT20CGD-450I | 0 | Renesas Electronics | ||
7 | GS8322Z18AGD-150 | 0 | Renesas Electronics | ||
8 | S29GL01GS11DHSS20 | 0 | Renesas Electronics | ||
9 | GS8161E36DD-333IV | 0 | Renesas Electronics | ||
10 | 7026L25G | 0 | Renesas Electronics | ||
11 | 25AA640A-I/ST | 0 | Renesas Electronics | ||
12 | S-25A040A0A-J8T2UD | 0 | Renesas Electronics | ||
13 | AS7C34098A-10JINTR | 0 | Renesas Electronics | ||
14 | MT25QU128ABB8ESF-0AUT | 79 | Renesas Electronics | ||
15 | W631GG6MB-11 | n/a | 2259 | Renesas Electronics | |
16 | 11LC010-I/MS | 0 | Renesas Electronics | ||
17 | IS43TR16640BL-107MBL | 0 | Renesas Electronics | ||
18 | GS8322Z18AGB-400 | 0 | Renesas Electronics | ||
19 | GS832218AGB-333 | 0 | Renesas Electronics | ||
20 | MT29F1G08ABAFAH4-ITE:F | 0 | Renesas Electronics |