制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 2 Mbit |
组织 | Organization | 64 k x 32 |
访问时间 | Access Time | 7 ns |
最大时钟频率 | Maximum Clock Frequency | 66 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.63 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 160 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
高度 | Height | 1.4 mm |
长度 | Length | 20 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V632 |
类型 | Type | Synchronous |
宽度 | Width | 14 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 144 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | IS61QDPB42M36A1-500M3LI | 0 | Renesas Electronics | ||
2 | IS61DDPB42M18A-400M3L | 0 | Renesas Electronics | ||
3 | W9864G6JB-6I TR | 0 | Renesas Electronics | ||
4 | MT61M256M32JE-12 N:A | 0 | Renesas Electronics | ||
5 | GS8672Q38BE-400I | 0 | Renesas Electronics | ||
6 | MT25QL512ABB8E12-0AUT | 0 | Renesas Electronics | ||
7 | 25LC010AT-E/MS | 0 | Renesas Electronics | ||
8 | SST25VF010A-33-4C-QAE | 0 | Renesas Electronics | ||
9 | 71V2556S100PFG8 | 0 | Renesas Electronics | ||
10 | W9725G6KB25I | 0 | Renesas Electronics | ||
11 | GS8322Z72C-133IV | 0 | Renesas Electronics | ||
12 | 6116SA20TDB | 0 | Renesas Electronics | ||
13 | MT41K256M16V00HWC1 | 0 | Renesas Electronics | ||
14 | IS43DR86400E-3DBLI-TR | 0 | Renesas Electronics | ||
15 | AS6C4008A-55ZIN | 0 | Renesas Electronics | ||
16 | W634GG8NB-09 TR | 0 | Renesas Electronics | ||
17 | IS43DR16320D-3DBLI-TR | 0 | Renesas Electronics | ||
18 | 5962-9150805MXA | 0 | Renesas Electronics | ||
19 | 25C080-I/SN | 0 | Renesas Electronics | ||
20 | GS4288C36GL-24 | 0 | Renesas Electronics |