制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 4 Mbit |
组织 | Organization | 512 k x 8 |
访问时间 | Access Time | 15 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 3 V |
电源电流—最大值 | Supply Current_Max | 145 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TSOP-44 |
封装 | Packaging | Tube |
高度 | Height | 1 mm |
长度 | Length | 18.41 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V424L15 |
类型 | Type | Asynchronous |
宽度 | Width | 10.16 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 26 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | W979H6KBVX2I | 0 | Renesas Electronics | ||
2 | 71016S15PHG | 0 | Renesas Electronics | ||
3 | AP-UM001GR13CS-2MST | 0 | Renesas Electronics | ||
4 | 25LC020A-E/ST | 0 | Renesas Electronics | ||
5 | GS8342R09BD-333I | 0 | Renesas Electronics | ||
6 | CY7C1325S-100AXC | 0 | Renesas Electronics | ||
7 | AT25128B-XHL-T | 2年内 | 10000 | Renesas Electronics | |
8 | S29GL128S90FAI010 | 0 | Renesas Electronics | ||
9 | S29GL512S11DHV010 | 0 | Renesas Electronics | ||
10 | GS8161E32DGD-333 | 0 | Renesas Electronics | ||
11 | M24C08-FDW6TP | 67 | 46 | Renesas Electronics | |
12 | CY15B256Q-SXAT | 0 | Renesas Electronics | ||
13 | GS88236CGB-200I | 0 | Renesas Electronics | ||
14 | GS88237CGB-300 | 0 | Renesas Electronics | ||
15 | 11AA160-I/MS | 0 | Renesas Electronics | ||
16 | GS88236CD-150I | 0 | Renesas Electronics | ||
17 | GS8162Z18DGB-400 | 0 | Renesas Electronics | ||
18 | 24AA044-I/MS | 0 | Renesas Electronics | ||
19 | GS816236DGB-250IV | 0 | Renesas Electronics | ||
20 | IS62WV2568DBLL-45HLI | 0 | Renesas Electronics |