制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 4 Mbit |
组织 | Organization | 256 k x 16 |
访问时间 | Access Time | 15 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 3 V |
电源电流—最大值 | Supply Current_Max | 170 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | SOJ-44 |
封装 | Packaging | Tube |
高度 | Height | 2.9 mm |
长度 | Length | 28.6 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V416S15 |
类型 | Type | Asynchronous |
宽度 | Width | 10.2 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 16 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS8322Z18AGD-250I | 0 | Renesas Electronics | ||
2 | GS88236CD-300I | 0 | Renesas Electronics | ||
3 | 71V65703S75PFG | 0 | Renesas Electronics | ||
4 | GS816136DGT-150IV | 0 | Renesas Electronics | ||
5 | BQ2204APN | 0 | Renesas Electronics | ||
6 | W25N512GVEIR | 0 | Renesas Electronics | ||
7 | BR24G04FVM-3GTTR | NA | 50 | Renesas Electronics | |
8 | AT28HC256-90FM/883 | 0 | Renesas Electronics | ||
9 | BR25L640FJ-WE2 | 0 | Renesas Electronics | ||
10 | GS8320F32AGT-6.5M | 0 | Renesas Electronics | ||
11 | GS88218CGB-300 | 0 | Renesas Electronics | ||
12 | M95040-DFMC6TG | 0 | Renesas Electronics | ||
13 | SDINBDG4-8G-H | 五年内 | 160 | Renesas Electronics | |
14 | 24LC04BH-E/MNY | 0 | Renesas Electronics | ||
15 | GS8342T18BD-400I | 0 | Renesas Electronics | ||
16 | 71V124SA15YG | 0 | Renesas Electronics | ||
17 | CY7C1460KV25-167BZXI | 0 | Renesas Electronics | ||
18 | 24LC02BH-E/SN | 0 | Renesas Electronics | ||
19 | AS4C64M8D2-25BCN | 0 | Renesas Electronics | ||
20 | DS1250AB-100IND+ | 0 | Renesas Electronics |