制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 4 Mbit |
组织 | Organization | 256 k x 16 |
访问时间 | Access Time | 12 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 3 V |
电源电流—最大值 | Supply Current_Max | 180 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | SOJ-44 |
封装 | Packaging | Cut Tape |
封装 | Packaging | MouseReel |
封装 | Packaging | Reel |
高度 | Height | 2.9 mm |
长度 | Length | 28.6 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V416S12 |
类型 | Type | Asynchronous |
宽度 | Width | 10.2 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 500 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | TC58BYG1S3HBAI4 | n/a | 0 | Renesas Electronics | |
2 | GD25Q127CSIG | 1242 | Renesas Electronics | ||
3 | GS8161Z36DGD-150 | 0 | Renesas Electronics | ||
4 | 71V416S10PHGI | 0 | Renesas Electronics | ||
5 | 93C66C-I/SN | 0 | Renesas Electronics | ||
6 | 25LC320-E/P | 0 | Renesas Electronics | ||
7 | GS8342Q19BGD-357I | 0 | Renesas Electronics | ||
8 | S25FL256SAGMFIR03 | Age > 1080 | 67 | Renesas Electronics | |
9 | GS8180QV36BGD-200I | 0 | Renesas Electronics | ||
10 | GS832236AD-150I | 0 | Renesas Electronics | ||
11 | GS882Z36CGD-250 | 0 | Renesas Electronics | ||
12 | GS832236AB-375I | 0 | Renesas Electronics | ||
13 | GS81302DT38GE-500I | 0 | Renesas Electronics | ||
14 | GS816132DGT-150V | 0 | Renesas Electronics | ||
15 | SDINBDA6-64G-I1 | 0 | Renesas Electronics | ||
16 | W25Q01JVZEIM TU | 0 | Renesas Electronics | ||
17 | GS8342TT10BGD-400 | 0 | Renesas Electronics | ||
18 | GS881Z18CGD-300 | 0 | Renesas Electronics | ||
19 | 24LC02BH-I/P | 0 | Renesas Electronics | ||
20 | MT29F1G01ABAFD12-IT:F | 0 | Renesas Electronics |