制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 4 Mbit |
组织 | Organization | 256 k x 16 |
访问时间 | Access Time | 15 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 3 V |
电源电流—最大值 | Supply Current_Max | 160 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | SOJ-44 |
封装 | Packaging | Reel |
高度 | Height | 2.9 mm |
长度 | Length | 28.6 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V416L15 |
类型 | Type | Asynchronous |
宽度 | Width | 10.2 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 500 |
子类别 | Subcategory | Memory & Data Storage |
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6 | MT53E1G32D2FW-046 IT:A TR | 0 | Renesas Electronics | ||
7 | 93AA66CXT-I/SN | 0 | Renesas Electronics | ||
8 | W25Q32JWZPIQ | 0 | Renesas Electronics | ||
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10 | CG8171AA | 0 | Renesas Electronics | ||
11 | GS82582QT20GE-500I | 0 | Renesas Electronics | ||
12 | MT53B2DARN-DC TR | 0 | Renesas Electronics | ||
13 | MT53E512M32D2NP-046 WT:F TR | 0 | Renesas Electronics | ||
14 | GS81302DT37AGD-400 | 0 | Renesas Electronics | ||
15 | 25LC020A-E/P | 0 | Renesas Electronics | ||
16 | GS81302T10GE-450I | 0 | Renesas Electronics | ||
17 | MTFC128GAPALNS-AAT TR | 0 | Renesas Electronics | ||
18 | AT25BCM512C-MAHF-T | 0 | Renesas Electronics | ||
19 | GS8161E18DD-400I | 0 | Renesas Electronics | ||
20 | IS62WV102416GALL-55TLI-TR | 0 | Renesas Electronics |