制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 4 Mbit |
组织 | Organization | 128 k x 36 |
访问时间 | Access Time | 7.5 ns |
最大时钟频率 | Maximum Clock Frequency | 117 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 255 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | CABGA-165 |
封装 | Packaging | Reel |
高度 | Height | 1.2 mm |
长度 | Length | 15 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V3577S75 |
类型 | Type | Synchronous |
宽度 | Width | 13 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 2000 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 71V3556SA150BGG | 0 | Renesas Electronics | ||
2 | GS8662TT11BD-350 | 0 | Renesas Electronics | ||
3 | GS864436GE-250IV | 0 | Renesas Electronics | ||
4 | 72801L10PFG | 0 | Renesas Electronics | ||
5 | IS42S83200G-7BL-TR | 0 | Renesas Electronics | ||
6 | AS6C1008-55SIN | 0 | Renesas Electronics | ||
7 | AT25SF641-SUB-T | 0 | Renesas Electronics | ||
8 | GS81302T36GE-300 | 0 | Renesas Electronics | ||
9 | GS81302S36E-350 | 0 | Renesas Electronics | ||
10 | GS882Z18CD-300 | 0 | Renesas Electronics | ||
11 | 24FC128T-I/SM | 0 | Renesas Electronics | ||
12 | GS8662T10BD-300 | 0 | Renesas Electronics | ||
13 | 93LC66BXT-I/SN | 0 | Renesas Electronics | ||
14 | 93LC56C-I/P | 0 | Renesas Electronics | ||
15 | SST26VF064B-104I/MN | 5972 | Renesas Electronics | ||
16 | MT53D384M16D1Z1AMWC1 | 0 | Renesas Electronics | ||
17 | GS8662QT37BGD-300 | 0 | Renesas Electronics | ||
18 | MT47H128M8SH-25E IT:M TR | 0 | Renesas Electronics | ||
19 | GS82583ED18GK-550I | 0 | Renesas Electronics | ||
20 | S26KL128SDABHA030 | 0 | Renesas Electronics |