制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 4 Mbit |
组织 | Organization | 128 k x 36 |
访问时间 | Access Time | 7.5 ns |
最大时钟频率 | Maximum Clock Frequency | 117 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 255 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | CABGA-165 |
封装 | Packaging | Tray |
高度 | Height | 1.2 mm |
长度 | Length | 15 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V3577S75 |
类型 | Type | Synchronous |
宽度 | Width | 13 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 136 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS8662DT37BGD-450 | 0 | Renesas Electronics | ||
2 | IS25LP256D-JLLE | n/a | 480 | Renesas Electronics | |
3 | SST39VF020-70-4I-NHE-T | 0 | Renesas Electronics | ||
4 | AT24CS01-MAHM-E | 0 | Renesas Electronics | ||
5 | BQ2022ADBZR | 4 | Renesas Electronics | ||
6 | MT25QU128ABA1EW9-0SIT | 10000 | Renesas Electronics | ||
7 | GS8662Q07BGD-357 | 0 | Renesas Electronics | ||
8 | AT25640B-SSHL-B | 0 | Renesas Electronics | ||
9 | M93C66-RMN3TP/K | 0 | Renesas Electronics | ||
10 | 71V416L15BE | 0 | Renesas Electronics | ||
11 | GD25LQ64ENIGR | 0 | Renesas Electronics | ||
12 | GS81302D11GE-500I | 0 | Renesas Electronics | ||
13 | GS82582TT20GE-550 | 0 | Renesas Electronics | ||
14 | GS82582T20GE-400I | 2160 | Renesas Electronics | ||
15 | SST25WF080-75-4I-ZAE | 0 | Renesas Electronics | ||
16 | GS8342D20BD-550 | 0 | Renesas Electronics | ||
17 | BR25L160FV-WE2 | 0 | Renesas Electronics | ||
18 | GS8342S36BD-400 | 0 | Renesas Electronics | ||
19 | 70T3339S166BC8 | 0 | Renesas Electronics | ||
20 | 7133LA70G | 0 | Renesas Electronics |