制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 4 Mbit |
组织 | Organization | 128 k x 36 |
访问时间 | Access Time | 3.1 ns |
最大时钟频率 | Maximum Clock Frequency | 200 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 360 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | CABGA-165 |
封装 | Packaging | Reel |
高度 | Height | 1.2 mm |
长度 | Length | 15 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V35761 |
类型 | Type | Synchronous |
宽度 | Width | 13 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 2000 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 70T3589S166BF | 0 | Renesas Electronics | ||
2 | GS8662DT19BGD-400 | 0 | Renesas Electronics | ||
3 | MT53E256M16D1DS-046 AIT:B TR | 0 | Renesas Electronics | ||
4 | 24LC025-E/MS | 0 | Renesas Electronics | ||
5 | AS6C4016-55BIN | 0 | Renesas Electronics | ||
6 | MT53E256M32D2DS-046 AAT ES:B | 0 | Renesas Electronics | ||
7 | BR24C21F-E2 | NA | 50 | Renesas Electronics | |
8 | CY62147GN30-45B2XIT | 0 | Renesas Electronics | ||
9 | M24C64-FMN6TP | n/a | 1057 | Renesas Electronics | |
10 | 7133LA20PFG | 0 | Renesas Electronics | ||
11 | 25LC160DT-I/MS | 0 | Renesas Electronics | ||
12 | 93C66CT-I/MNY | 0 | Renesas Electronics | ||
13 | GD25LQ40CTIG | 2000 | Renesas Electronics | ||
14 | MT35XU01GBBA2G12-0AAT TR | 0 | Renesas Electronics | ||
15 | S25FL128SAGBHM203 | 0 | Renesas Electronics | ||
16 | 11LC160T-I/MS | 0 | Renesas Electronics | ||
17 | AS7C3256A-15TINTR | 0 | Renesas Electronics | ||
18 | 72V273L10PFG | 0 | Renesas Electronics | ||
19 | IS43TR16128D-107MBL | 0 | Renesas Electronics | ||
20 | GS81302S08E-250I | 0 | Renesas Electronics |