制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 4 Mbit |
组织 | Organization | 128 k x 36 |
访问时间 | Access Time | 3.1 ns |
最大时钟频率 | Maximum Clock Frequency | 200 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 360 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | PBGA-119 |
封装 | Packaging | Tray |
高度 | Height | 2.15 mm |
长度 | Length | 14 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V35761SA200 |
类型 | Type | Synchronous |
宽度 | Width | 22 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 84 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | N25S830HAT22I | 300 | Renesas Electronics | ||
2 | CY7C1350G-200AXCT | 0 | Renesas Electronics | ||
3 | BR34E02NUX-WTR | 0 | Renesas Electronics | ||
4 | GS816118DD-333IV | 0 | Renesas Electronics | ||
5 | MTFC32GAPALBH-IT | 21+ | 400 | Renesas Electronics | |
6 | AS62V256A-70SINTR | 0 | Renesas Electronics | ||
7 | S-24C64CI-K8T3U3 | 0 | Renesas Electronics | ||
8 | 11LC080T-E/TT | 0 | Renesas Electronics | ||
9 | GS8342T11BGD-400I | 0 | Renesas Electronics | ||
10 | 7006L15JG | 0 | Renesas Electronics | ||
11 | DS1245AB-70IND+ | 0 | Renesas Electronics | ||
12 | GS8182T09BD-200I | 0 | Renesas Electronics | ||
13 | AT45DB041E-SHNHA-T | 0 | Renesas Electronics | ||
14 | GS8182T37BGD-435 | 0 | Renesas Electronics | ||
15 | AT25DF512C-MAHN-T | 0 | Renesas Electronics | ||
16 | S25FL127SABMFI001 | 0 | Renesas Electronics | ||
17 | SST26WF080BT-104I/MF | 0 | Renesas Electronics | ||
18 | GS8161E36DD-150I | 0 | Renesas Electronics | ||
19 | CY7C1041G30-10ZSXA | 0 | Renesas Electronics | ||
20 | AT24C02C-MAHM-T | 2年内 | 40000 | Renesas Electronics |