制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 4 Mbit |
组织 | Organization | 256 k x 18 |
访问时间 | Access Time | 8.5 ns |
最大时钟频率 | Maximum Clock Frequency | 100 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 235 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | PBGA-119 |
封装 | Packaging | Tray |
高度 | Height | 2.15 mm |
长度 | Length | 14 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V3559S85 |
类型 | Type | Synchronous |
宽度 | Width | 22 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 84 |
子类别 | Subcategory | Memory & Data Storage |
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1 | MT61K256M32JE-14:A | n/a | 0 | Renesas Electronics | |
2 | AT25080B-SSHL-T | 1451 | Renesas Electronics | ||
3 | MT29F32G08CBEDBL83A3WC1 | 0 | Renesas Electronics | ||
4 | GS881Z32CGT-200V | 0 | Renesas Electronics | ||
5 | 25LC080AT-E/ST | 0 | Renesas Electronics | ||
6 | MT44K64M18RB-107E IT:A TR | 0 | Renesas Electronics | ||
7 | S29GL128S90TFI020 | n/a | 0 | Renesas Electronics | |
8 | AS7C256A-12TINTR | 0 | Renesas Electronics | ||
9 | GS81302S36E-350I | 0 | Renesas Electronics | ||
10 | IS61WV6416EEBLL-10BLI-TR | 0 | Renesas Electronics | ||
11 | S70KS1281DPBHV020 | 0 | Renesas Electronics | ||
12 | GS880F18CGT-4.5I | 0 | Renesas Electronics | ||
13 | 25LC640XT-I/ST | 0 | Renesas Electronics | ||
14 | AT28C256E-25DM/883-815 | 0 | Renesas Electronics | ||
15 | GS82582DT21GE-550IS | 0 | Renesas Electronics | ||
16 | M24M01-DWMN3TP/K | 86 | Renesas Electronics | ||
17 | 93LC46AT-E/MNY | 0 | Renesas Electronics | ||
18 | IS43LR32160B-6BL-TR | 0 | Renesas Electronics | ||
19 | GLS85LP1008P-S-I-FTE-ND004 | 0 | Renesas Electronics | ||
20 | GS81302T36GE-375 | 0 | Renesas Electronics |