制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 4 Mbit |
组织 | Organization | 256 k x 18 |
访问时间 | Access Time | 5 ns |
最大时钟频率 | Maximum Clock Frequency | 100 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 250 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
高度 | Height | 1.4 mm |
长度 | Length | 20 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V3558S100 |
类型 | Type | Synchronous |
宽度 | Width | 14 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 72 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | S25FS128SAGNFV103 | 0 | Renesas Electronics | ||
2 | MTFC64GASAOEA-WT | 0 | Renesas Electronics | ||
3 | AS4C256M16D3C-10BIN | 0 | Renesas Electronics | ||
4 | GS81302DT37AGD-333I | 0 | Renesas Electronics | ||
5 | BR93G66FJ-3BGTE2 | NA | 100 | Renesas Electronics | |
6 | CY7C1472BV33-167AXI | 6 | Renesas Electronics | ||
7 | IS43LD32640B-25BLI-TR | 0 | Renesas Electronics | ||
8 | GS8662D06BD-450 | 0 | Renesas Electronics | ||
9 | GD25Q16CNIGR | 0 | Renesas Electronics | ||
10 | GD25WD40COIGR | 0 | Renesas Electronics | ||
11 | GS8662R36BGD-300 | 0 | Renesas Electronics | ||
12 | IS49RL36160-093EBLI | 0 | Renesas Electronics | ||
13 | AT25640B-MAPDGV-E | 0 | Renesas Electronics | ||
14 | GS81280Z36GT-333 | 0 | Renesas Electronics | ||
15 | 71V65703S80BGG | 0 | Renesas Electronics | ||
16 | 7133LA90G | 0 | Renesas Electronics | ||
17 | M95256-DFMN6TP | 3 | Renesas Electronics | ||
18 | MT53B512M32D2GZ-062 WT ES:B TR | 0 | Renesas Electronics | ||
19 | 71256SA20YGI8 | 0 | Renesas Electronics | ||
20 | CY14B101LA-ZS20XI | 0 | Renesas Electronics |