制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 4 Mbit |
组织 | Organization | 128 k x 36 |
访问时间 | Access Time | 5 ns |
最大时钟频率 | Maximum Clock Frequency | 100 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 250 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | CABGA-165 |
封装 | Packaging | Reel |
高度 | Height | 1.2 mm |
长度 | Length | 15 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V3556SA100 |
类型 | Type | Synchronous |
宽度 | Width | 13 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 2000 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS81302S09E-250I | 0 | Renesas Electronics | ||
2 | GS8182Q36BD-200I | 0 | Renesas Electronics | ||
3 | CY15B128Q-SXAT | 0 | Renesas Electronics | ||
4 | GS864436E-225 | 0 | Renesas Electronics | ||
5 | CY7C1318KV18-300BZXC | 0 | Renesas Electronics | ||
6 | GS816273CC-250V | 0 | Renesas Electronics | ||
7 | MT29F16T08GWLBEM5:B TR | 0 | Renesas Electronics | ||
8 | GS74117AX-8 | 0 | Renesas Electronics | ||
9 | IS42S32160F-75ETLI | 0 | Renesas Electronics | ||
10 | CAT24S128C4UTR | 0 | Renesas Electronics | ||
11 | 7006S55G | 0 | Renesas Electronics | ||
12 | GS864236B-250M | 0 | Renesas Electronics | ||
13 | 71V416L10YG | 0 | Renesas Electronics | ||
14 | W25Q256JWFIM TR | 0 | Renesas Electronics | ||
15 | GS8662T10BD-450I | 0 | Renesas Electronics | ||
16 | 25AA160-I/P | 0 | Renesas Electronics | ||
17 | 24LC024H-I/SN | 0 | Renesas Electronics | ||
18 | IS43LR16400C-6BLI-TR | 0 | Renesas Electronics | ||
19 | GS8128436GB-167IV | 0 | Renesas Electronics | ||
20 | MT29F8T08EWHBFM5-R:B | 0 | Renesas Electronics |