制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 4 Mbit |
组织 | Organization | 128 k x 36 |
访问时间 | Access Time | 5 ns |
最大时钟频率 | Maximum Clock Frequency | 100 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 250 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
高度 | Height | 1.4 mm |
长度 | Length | 20 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V3556S100 |
类型 | Type | Synchronous |
宽度 | Width | 14 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 72 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS8662D38BD-550 | 0 | Renesas Electronics | ||
2 | BR24C02-WDS6TP | 0 | Renesas Electronics | ||
3 | GS8672T20BE-500I | 0 | Renesas Electronics | ||
4 | GS81282Z18GD-200V | 0 | Renesas Electronics | ||
5 | 71V416S15YGI8 | 0 | Renesas Electronics | ||
6 | 7024S35G | 0 | Renesas Electronics | ||
7 | S34ML01G200TFI5C0 | 0 | Renesas Electronics | ||
8 | 24LC024-E/SN | 0 | Renesas Electronics | ||
9 | GS816273CC-300I | 0 | Renesas Electronics | ||
10 | GS8662D08BGD-350 | 0 | Renesas Electronics | ||
11 | 71V416L12BEG8 | 0 | Renesas Electronics | ||
12 | GS8662S09BGD-333I | 0 | Renesas Electronics | ||
13 | GD25LQ64ENIGR | 0 | Renesas Electronics | ||
14 | GS81302Q10GE-318I | 0 | Renesas Electronics | ||
15 | GS8161Z36DGT-400I | 0 | Renesas Electronics | ||
16 | W29N02GZBIBA TR | 0 | Renesas Electronics | ||
17 | GS8672Q36BE-400 | 0 | Renesas Electronics | ||
18 | GS8128018GT-250IV | 0 | Renesas Electronics | ||
19 | W63BH6MBVACE TR | 0 | Renesas Electronics | ||
20 | IS62WV6416DBLL-45B2LI | 0 | Renesas Electronics |