制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 16 kbit |
组织 | Organization | 2 k x 8 |
访问时间 | Access Time | 35 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 3 V |
电源电流—最大值 | Supply Current_Max | 125 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-64 |
封装 | Packaging | Tray |
高度 | Height | 1.4 mm |
长度 | Length | 14 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V321L35 |
类型 | Type | Asynchronous |
宽度 | Width | 14 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 45 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 70V3399S166BFG | 0 | Renesas Electronics | ||
2 | GS8672D36BE-300I | 0 | Renesas Electronics | ||
3 | GS81302T20GE-450I | 0 | Renesas Electronics | ||
4 | GS8640E36GT-167 | 0 | Renesas Electronics | ||
5 | S29GL064N90BFA040 | 0 | Renesas Electronics | ||
6 | IS43R16320E-6BLI-TR | 0 | Renesas Electronics | ||
7 | MR4A16BCMA35R | 0 | Renesas Electronics | ||
8 | MT35XL256ABA1G12-0AAT | 0 | Renesas Electronics | ||
9 | CY62146EV30LL-45ZSXI | 342 | Renesas Electronics | ||
10 | MT29F256G08EBHAFB16A3WC1-R | 0 | Renesas Electronics | ||
11 | MT53B384M32D2NP-062 AIT:B TR | 0 | Renesas Electronics | ||
12 | 6116LA35TDB | 0 | Renesas Electronics | ||
13 | CY62147G18-55BVXI | 0 | Renesas Electronics | ||
14 | BR24C01-WDW6TP | 0 | Renesas Electronics | ||
15 | MR256DL08BMA45R | 0 | Renesas Electronics | ||
16 | ANV31A61ASC66 T | 0 | Renesas Electronics | ||
17 | IS21ES32G-JQLI-TR | n/a | 0 | Renesas Electronics | |
18 | S25FL256SDSMFI003 | 0 | Renesas Electronics | ||
19 | BQ2205LYPWRG4 | 0 | Renesas Electronics | ||
20 | MT62F1G32D4DS-031 AIT:B | 0 | Renesas Electronics |