制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 16 kbit |
组织 | Organization | 2 k x 8 |
访问时间 | Access Time | 35 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 3 V |
电源电流—最大值 | Supply Current_Max | 95 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | PLCC-52 |
封装 | Packaging | Tube |
高度 | Height | 3.63 mm |
长度 | Length | 19 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V321L35 |
类型 | Type | Asynchronous |
宽度 | Width | 19 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 24 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | AP-UM001GR13CS-2MHNRT | 0 | Renesas Electronics | ||
2 | GS88236CB-150V | 0 | Renesas Electronics | ||
3 | S29GL01GT11FHB023 | 0 | Renesas Electronics | ||
4 | 93AA46C-I/SN | 0 | Renesas Electronics | ||
5 | GS8662Q36BGD-333 | 0 | Renesas Electronics | ||
6 | IS43DR16320C-25DBL-TR | 0 | Renesas Electronics | ||
7 | GS8662D18BGD-300 | 0 | Renesas Electronics | ||
8 | GS8662Q08BD-300M | 0 | Renesas Electronics | ||
9 | GS8662T38BGD-400 | 0 | Renesas Electronics | ||
10 | 71V67703S80BG8 | 0 | Renesas Electronics | ||
11 | 72T36105L6-7BB | 0 | Renesas Electronics | ||
12 | CY15B128Q-SXA | 0 | Renesas Electronics | ||
13 | GS81302Q07E-200 | 0 | Renesas Electronics | ||
14 | GS8662R18BD-250 | 0 | Renesas Electronics | ||
15 | ANV31A81WSK66 R | 0 | Renesas Electronics | ||
16 | BR93H56RF-2CE2 | NA | 100 | Renesas Electronics | |
17 | 24LC04BHT-E/MS | 0 | Renesas Electronics | ||
18 | S34MS04G100TFI003 | 0 | Renesas Electronics | ||
19 | GS8342QT07BD-250 | 0 | Renesas Electronics | ||
20 | MT35XL256ABA1GSF-0AAT | 0 | Renesas Electronics |