制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 16 kbit |
组织 | Organization | 2 k x 8 |
访问时间 | Access Time | 25 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 3 V |
电源电流—最大值 | Supply Current_Max | 130 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-64 |
封装 | Packaging | Tray |
高度 | Height | 1.4 mm |
长度 | Length | 14 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V321L25 |
类型 | Type | Asynchronous |
宽度 | Width | 14 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 45 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | IS61DDB22M36A-300B4LI | 0 | Renesas Electronics | ||
2 | CY7C2265KV18-450BZC | 0 | Renesas Electronics | ||
3 | IS45S32200L-6BLA1 | 0 | Renesas Electronics | ||
4 | S29GL256S11TFIV10 | 0 | Renesas Electronics | ||
5 | VTDU32PC008G | 0 | Renesas Electronics | ||
6 | GS81302D19GE-350 | 0 | Renesas Electronics | ||
7 | S25HS512TDSMHV013 | 0 | Renesas Electronics | ||
8 | GS8321E18AD-250V | 0 | Renesas Electronics | ||
9 | IS42S32200L-6BLI-TR | 0 | Renesas Electronics | ||
10 | GS832136AGD-333V | 0 | Renesas Electronics | ||
11 | CY7C1460KVE25-200BZXI | 0 | Renesas Electronics | ||
12 | MXD1210ESA+T | 0 | Renesas Electronics | ||
13 | CY7C1165KV18-400BZC | 0 | Renesas Electronics | ||
14 | IS61LPS25618A-200TQLI-TR | 0 | Renesas Electronics | ||
15 | GS8662T36BD-300 | 0 | Renesas Electronics | ||
16 | SST39LF020-55-4C-MME | 0 | Renesas Electronics | ||
17 | AS7C4096A-12TCN | 270 | Renesas Electronics | ||
18 | IS42S16400J-6TL | 0 | Renesas Electronics | ||
19 | 72V81L15PAG | 0 | Renesas Electronics | ||
20 | IS66WV51216EBLL-70BLI | 5000 | Renesas Electronics |