制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 4 Mbit |
组织 | Organization | 128 k x 36 |
访问时间 | Access Time | 3.3 ns |
最大时钟频率 | Maximum Clock Frequency | 183 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 350 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Tray |
高度 | Height | 1.4 mm |
长度 | Length | 20 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V25761S183 |
类型 | Type | Synchronous |
宽度 | Width | 14 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 72 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 71V67903S80BQ8 | 0 | Renesas Electronics | ||
2 | MT29VZZZ7D8DQFSL-046 W.9J8 | 0 | Renesas Electronics | ||
3 | GS8662R09BD-350I | 0 | Renesas Electronics | ||
4 | GS8662D11BGD-450I | 0 | Renesas Electronics | ||
5 | 71V25761S183PFG8 | 0 | Renesas Electronics | ||
6 | 71V67602S166PFG | 0 | Renesas Electronics | ||
7 | 24LC02BT-E/SN | 8030 | Renesas Electronics | ||
8 | S29GL512T11FHIV13 | 0 | Renesas Electronics | ||
9 | AS7C32098A-10TCN | 0 | Renesas Electronics | ||
10 | 70V658S15BC8 | 0 | Renesas Electronics | ||
11 | GS74116AX-8I | 0 | Renesas Electronics | ||
12 | W97BH6MBVA2E TR | 0 | Renesas Electronics | ||
13 | 71024S20TYG8 | 0 | Renesas Electronics | ||
14 | S25FL512SAGBHIS13 | 0 | Renesas Electronics | ||
15 | W634GU8NB09I TR | 0 | Renesas Electronics | ||
16 | MT53D8D1AJS-DC | 0 | Renesas Electronics | ||
17 | S99ML01G2B043 | 0 | Renesas Electronics | ||
18 | IS43DR86400D-25DBLI-TR | 0 | Renesas Electronics | ||
19 | BR24L08FVT-WE2 | NA | 100 | Renesas Electronics | |
20 | CY7C1165KV18-400BZC | 0 | Renesas Electronics |