制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 1 Mbit |
组织 | Organization | 64 k x 16 |
访问时间 | Access Time | 12 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 3 V |
电源电流—最大值 | Supply Current_Max | 150 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | CABGA-48 |
封装 | Packaging | Reel |
高度 | Height | 1.4 mm |
长度 | Length | 7 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V016SA12 |
类型 | Type | Asynchronous |
宽度 | Width | 7 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 2000 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 25LC512-I/P | 4080 | Renesas Electronics | ||
2 | 25LC256T-I/SN | 2年内 | 10000 | Renesas Electronics | |
3 | MTFC128GARATEK-WT TR | 0 | Renesas Electronics | ||
4 | GS88218CGD-250V | 0 | Renesas Electronics | ||
5 | IS61DDB22M18-250M3 | 0 | Renesas Electronics | ||
6 | 70V06L15PFG8 | 0 | Renesas Electronics | ||
7 | GS8672T38BGE-450 | 0 | Renesas Electronics | ||
8 | W25X20CLSNIG TR | 35000 | Renesas Electronics | ||
9 | DS1220AD-200IND+ | 0 | Renesas Electronics | ||
10 | GS864418GE-133IV | 0 | Renesas Electronics | ||
11 | IS43TR16256A-125KBL | 0 | Renesas Electronics | ||
12 | IS61DDPB21M18A-400M3L | 0 | Renesas Electronics | ||
13 | MT62F1G64D8EJ-031 AAT:A TR | 0 | Renesas Electronics | ||
14 | MT29GZ5A5BPGGA-53ITES.87J | 0 | Renesas Electronics | ||
15 | MT53E768M64D4HJ-046 WT:B TR | 0 | Renesas Electronics | ||
16 | CY7C2265XV18-633BZXC | 0 | Renesas Electronics | ||
17 | FM25640B-GTR | 0 | Renesas Electronics | ||
18 | DS28E05X-S+T | 0 | Renesas Electronics | ||
19 | EDB130ABDBH-1D-F-D | 0 | Renesas Electronics | ||
20 | S25FL512SDPBHV313 | 0 | Renesas Electronics |