制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 1 M x 18 |
访问时间 | Access Time | 3.2 ns |
最大时钟频率 | Maximum Clock Frequency | 200 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.5 V |
电源电压-最小 | Supply Voltage_Min | 2.5 V |
电源电流—最大值 | Supply Current_Max | 275 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
封装 / 箱体 | Package_Case | PBGA-119 |
封装 | Packaging | Tray |
高度 | Height | 2.15 mm |
长度 | Length | 14 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71T75802S200 |
类型 | Type | Synchronous |
宽度 | Width | 22 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 84 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS82582Q37GE-375 | 0 | Renesas Electronics | ||
2 | IS61VPS51236A-200TQI-TR | 0 | Renesas Electronics | ||
3 | GS82582Q19GE-400 | 0 | Renesas Electronics | ||
4 | S29GL032N90BFA040 | 0 | Renesas Electronics | ||
5 | SDINBDA6-32G-XI | 0 | Renesas Electronics | ||
6 | 24AA024H-I/SN | 0 | Renesas Electronics | ||
7 | GS8662R18BD-400 | 0 | Renesas Electronics | ||
8 | EDB8164B4PT-1D-F-R | 145 | Renesas Electronics | ||
9 | 71V424L10PHGI8 | 0 | Renesas Electronics | ||
10 | 72V36110L7-5BBGI | 0 | Renesas Electronics | ||
11 | 723631L15PFG8 | 0 | Renesas Electronics | ||
12 | IS43LD32160A-18BLI | 0 | Renesas Electronics | ||
13 | S29GL256S90DHSS30 | 0 | Renesas Electronics | ||
14 | GS78132AGB-10I | 0 | Renesas Electronics | ||
15 | 24AA64-I/MS | 0 | Renesas Electronics | ||
16 | GS81302Q37E-318 | 0 | Renesas Electronics | ||
17 | 24LC02B-I/ST | 190601 | 5331 | Renesas Electronics | |
18 | AS7C1024B-20TCNTR | 0 | Renesas Electronics | ||
19 | MT53E128M32D2FW-046 AIT:A TR | 0 | Renesas Electronics | ||
20 | 71V65803S150BQ | 0 | Renesas Electronics |