制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 1 M x 18 |
访问时间 | Access Time | 3.2 ns |
最大时钟频率 | Maximum Clock Frequency | 200 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.625 V |
电源电压-最小 | Supply Voltage_Min | 2.375 V |
电源电流—最大值 | Supply Current_Max | 295 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | BGA-119 |
封装 | Packaging | Tray |
存储类型 | Memory Type | SDR |
系列 | Series | 71T75802S200 |
类型 | Type | Synchronous |
商标 | Brand | Renesas / IDT |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 84 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | S29AL008J70TFN010 | 0 | Renesas Electronics | ||
2 | AT24CW1280-UUR0B-T | 0 | Renesas Electronics | ||
3 | AT24C32D-SSHM-B | 2年内 | 61000 | Renesas Electronics | |
4 | IS64WV102416FBLL-10CTLA3-TR | 0 | Renesas Electronics | ||
5 | W25Q16JVBYIQ TR | 0 | Renesas Electronics | ||
6 | GS8662QT07BD-300 | 0 | Renesas Electronics | ||
7 | S29GL512S11DHV013 | 0 | Renesas Electronics | ||
8 | 5962-1821201QXC | 0 | Renesas Electronics | ||
9 | IS61NVP25636A-200TQLI-TR | 0 | Renesas Electronics | ||
10 | IS46R86400D-6BLA1 | 0 | Renesas Electronics | ||
11 | IS25LP01G-RILE | 0 | Renesas Electronics | ||
12 | MTFC32GAPALHT-AAT TR | 0 | Renesas Electronics | ||
13 | GS81302TT37GE-300 | 0 | Renesas Electronics | ||
14 | 7006L25G | 0 | Renesas Electronics | ||
15 | GS81302D08E-250 | 0 | Renesas Electronics | ||
16 | IS45S32800D-6BLA1 | 0 | Renesas Electronics | ||
17 | 24LC02BT-E/MNY | 0 | Renesas Electronics | ||
18 | CY7C1061GE18-15ZXI | 0 | Renesas Electronics | ||
19 | GS832236AGD-333V | 0 | Renesas Electronics | ||
20 | IS42S16100H-7BL | 0 | Renesas Electronics |