制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 16 kbit |
组织 | Organization | 2 k x 8 |
访问时间 | Access Time | 20 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 5.5 V |
电源电压-最小 | Supply Voltage_Min | 4.5 V |
电源电流—最大值 | Supply Current_Max | 200 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | PLCC-52 |
封装 | Packaging | Reel |
高度 | Height | 3.63 mm |
长度 | Length | 19 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 7132 |
类型 | Type | Asynchronous |
宽度 | Width | 19 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 400 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | MT29F512G08EBLCEJ4-T:C TR | 0 | Renesas Electronics | ||
2 | CY7C1354D-200BZC | 0 | Renesas Electronics | ||
3 | BR25H080F-WCE2 | 0 | Renesas Electronics | ||
4 | 23LCV512-I/ST | 0 | Renesas Electronics | ||
5 | IS43TR16128D-107MBLI | 58 | Renesas Electronics | ||
6 | GS8161Z18DGD-333I | 0 | Renesas Electronics | ||
7 | 5962-3829414MXA | 0 | Renesas Electronics | ||
8 | S29AL016J70FFI020 | 0 | Renesas Electronics | ||
9 | BR24T32FJ-WE2 | NA | 100 | Renesas Electronics | |
10 | W25Q20EWSVIG TR | 0 | Renesas Electronics | ||
11 | IS46TR16512BL-125KBLA1-TR | 0 | Renesas Electronics | ||
12 | 71T75802S150BG | 0 | Renesas Electronics | ||
13 | GD25Q64ENIGR | 0 | Renesas Electronics | ||
14 | GD25WQ32ENIGR | 0 | Renesas Electronics | ||
15 | IS43TR16128DL-125KBLI | 190303, | 4 | Renesas Electronics | |
16 | AT25QL641-CCUE-T | 0 | Renesas Electronics | ||
17 | 24LC024/ST | 0 | Renesas Electronics | ||
18 | GS8662Q19BGD-357 | 0 | Renesas Electronics | ||
19 | GLS85VM0512P-S-I-LFWE-ND205 | 0 | Renesas Electronics | ||
20 | GS81313HT18GK-675I | 0 | Renesas Electronics |