制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 16 kbit |
组织 | Organization | 2 k x 8 |
访问时间 | Access Time | 20 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 5.5 V |
电源电压-最小 | Supply Voltage_Min | 4.5 V |
电源电流—最大值 | Supply Current_Max | 200 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | PLCC-52 |
封装 | Packaging | Tube |
高度 | Height | 3.63 mm |
长度 | Length | 19 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 7132 |
类型 | Type | Asynchronous |
宽度 | Width | 19 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 24 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | LE25U20AMBM02-AH | 0 | Renesas Electronics | ||
2 | S25FL128SAGMFIR11 | 0 | Renesas Electronics | ||
3 | GS864436E-225V | 0 | Renesas Electronics | ||
4 | SST25VF080B-50-4I-S2AE | 19+ | 7 | Renesas Electronics | |
5 | S70FS01GSAGBHB210 | 0 | Renesas Electronics | ||
6 | GS8662DT10BGD-333I | 0 | Renesas Electronics | ||
7 | GS81302Q10E-250 | 0 | Renesas Electronics | ||
8 | SST26VF064BEUIT-104I/MF | 0 | Renesas Electronics | ||
9 | GS8161E32DGD-400I | 0 | Renesas Electronics | ||
10 | GS8256418GD-200 | 0 | Renesas Electronics | ||
11 | RMLV3216AGSA-5S2#KA0 | 0 | Renesas Electronics | ||
12 | IS43LR32640A-5BL | 0 | Renesas Electronics | ||
13 | S72XS256RE0AHBHH0 | 0 | Renesas Electronics | ||
14 | AT25080B-XPDGV-T | 0 | Renesas Electronics | ||
15 | GS816118DGT-375I | 0 | Renesas Electronics | ||
16 | 70T3519S166BCI8 | 0 | Renesas Electronics | ||
17 | IS61LV5128AL-10TI-TR | 0 | Renesas Electronics | ||
18 | W63AH6NBVADE TR | 0 | Renesas Electronics | ||
19 | GS81313HD36GK-833 | 0 | Renesas Electronics | ||
20 | W71NW20GD1DW | 0 | Renesas Electronics |