制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 256 kbit |
组织 | Organization | 32 k x 8 |
访问时间 | Access Time | 20 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 5.5 V |
电源电压-最小 | Supply Voltage_Min | 4.5 V |
电源电流—最大值 | Supply Current_Max | 145 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TSOP-28 |
封装 | Packaging | Reel |
高度 | Height | 1 mm |
长度 | Length | 8 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71256SA |
类型 | Type | Asynchronous |
宽度 | Width | 11.8 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 2000 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | IS43DR86400C-3DBI-TR | 0 | Renesas Electronics | ||
2 | W25Q32JWZPIQ | 0 | Renesas Electronics | ||
3 | 25AA040AT-I/MC | 0 | Renesas Electronics | ||
4 | GS82582D18GE-300I | 0 | Renesas Electronics | ||
5 | MT40A1G16KH-062E AAT:E TR | 0 | Renesas Electronics | ||
6 | GS8662TT37BD-333 | 0 | Renesas Electronics | ||
7 | 23LC1024T-I/SN | n/a | 91 | Renesas Electronics | |
8 | IS61WV102416EDALL-12TLI | 0 | Renesas Electronics | ||
9 | M95512-WDW6TP | 0 | Renesas Electronics | ||
10 | 71256SA15PZG8 | 0 | Renesas Electronics | ||
11 | GS81302T09GE-350I | 0 | Renesas Electronics | ||
12 | TC58CYG1S3HRAIJ | 39 | Renesas Electronics | ||
13 | 71V3559S80PFG | 0 | Renesas Electronics | ||
14 | MT53D768M64D8SQ-053 WT ES:E | 0 | Renesas Electronics | ||
15 | MT51K256M32HF-60 N:B TR | 0 | Renesas Electronics | ||
16 | GS81302T20GE-350I | 0 | Renesas Electronics | ||
17 | M24C02-FDW6TP | 2303250004 | 3000 | Renesas Electronics | |
18 | M24C16-RMC6TG | 0 | Renesas Electronics | ||
19 | W25N512GVPIT TR | 0 | Renesas Electronics | ||
20 | S25FL512SAGMFIR10 | 30 | Renesas Electronics |