制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 256 kbit |
组织 | Organization | 32 k x 8 |
访问时间 | Access Time | 20 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 5.5 V |
电源电压-最小 | Supply Voltage_Min | 4.5 V |
电源电流—最大值 | Supply Current_Max | 145 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TSOP-28 |
封装 | Packaging | Tray |
高度 | Height | 1 mm |
长度 | Length | 8 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71256SA |
类型 | Type | Asynchronous |
宽度 | Width | 11.8 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 234 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS8342QT10BGD-250 | 0 | Renesas Electronics | ||
2 | GS8342T19BD-300I | 0 | Renesas Electronics | ||
3 | IS43R86400D-5BL | 0 | Renesas Electronics | ||
4 | GD25Q80CTIG | 22+ | 0 | Renesas Electronics | |
5 | GS8182D09BD-400 | 0 | Renesas Electronics | ||
6 | 93LC56C-E/SN | 0 | Renesas Electronics | ||
7 | GS81302Q38AGD-400 | 0 | Renesas Electronics | ||
8 | GS8673ET18BGK-675I | 0 | Renesas Electronics | ||
9 | 93C56AT-E/SN | 0 | Renesas Electronics | ||
10 | BR24G04FVM-3GTTR | NA | 50 | Renesas Electronics | |
11 | SQR-SD4I16G2K6SECB | 0 | Renesas Electronics | ||
12 | S29GL064N90FFI013 | 0 | Renesas Electronics | ||
13 | GS8342T37BGD-350 | 0 | Renesas Electronics | ||
14 | GS880F18CGT-5.5I | 0 | Renesas Electronics | ||
15 | GS880E36CGT-300I | 0 | Renesas Electronics | ||
16 | GS8161E18DGD-333 | 0 | Renesas Electronics | ||
17 | IS42RM16200D-75BLI | 0 | Renesas Electronics | ||
18 | 72V03L25JGI | 0 | Renesas Electronics | ||
19 | S34ML16G303TFV000 | 0 | Renesas Electronics | ||
20 | 25LC160C-I/SN | 0 | Renesas Electronics |