制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 256 kbit |
组织 | Organization | 32 k x 8 |
访问时间 | Access Time | 25 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 5.5 V |
电源电压-最小 | Supply Voltage_Min | 4.5 V |
电源电流—最大值 | Supply Current_Max | 130 mA |
最小工作温度 | Minimum Operating Temperature | - 55 C |
最大工作温度 | Maximum Operating Temperature | + 125 C |
安装风格 | Mounting Style | Through Hole |
封装 / 箱体 | Package_Case | CDIP-28 |
封装 | Packaging | Tube |
高度 | Height | 1.65 mm |
长度 | Length | 37.2 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71256L25 |
类型 | Type | Asynchronous |
宽度 | Width | 15.24 mm |
商标 | Brand | Renesas / IDT |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 13 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS81302S08E-333 | 0 | Renesas Electronics | ||
2 | GS8162Z36DGD-333I | 0 | Renesas Electronics | ||
3 | CY7C2270XV18-600BZXC | 0 | Renesas Electronics | ||
4 | GS816136DGT-333I | 0 | Renesas Electronics | ||
5 | GS816132DD-333I | 0 | Renesas Electronics | ||
6 | GS8320Z36AGT-333IV | 0 | Renesas Electronics | ||
7 | MT40A512M16TB-062E IT:J TR | 0 | Renesas Electronics | ||
8 | MTFC8GAMALNA-AAT ES | 0 | Renesas Electronics | ||
9 | GS8321Z18AD-333V | 0 | Renesas Electronics | ||
10 | AS4C256M8D2-25BCNTR | 0 | Renesas Electronics | ||
11 | IS66WV51216EALL-70BLI-TR | 0 | Renesas Electronics | ||
12 | S29GL01GT11TFB023 | 0 | Renesas Electronics | ||
13 | 71V65703S80BG8 | 0 | Renesas Electronics | ||
14 | W966D6HBGX7I | 0 | Renesas Electronics | ||
15 | 72V51446L6BB8 | 0 | Renesas Electronics | ||
16 | IS43TR16512B-125KBLI-TR | 0 | Renesas Electronics | ||
17 | 11LC010T-E/SN | 0 | Renesas Electronics | ||
18 | MT35XL01GBBA2G12-0SIT | 0 | Renesas Electronics | ||
19 | AT27C512R-45PU | 0 | Renesas Electronics | ||
20 | IS42S32160D-7BLI-TR | 0 | Renesas Electronics |