制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 1 Mbit |
组织 | Organization | 128 k x 8 |
访问时间 | Access Time | 20 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 5.5 V |
电源电压-最小 | Supply Voltage_Min | 4.5 V |
电源电流—最大值 | Supply Current_Max | 140 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | SOJ-32 |
封装 | Packaging | Tube |
高度 | Height | 2.67 mm |
长度 | Length | 21.95 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71024 |
类型 | Type | Asynchronous |
宽度 | Width | 7.6 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 23 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS816036DGT-150V | 0 | Renesas Electronics | ||
2 | GS881Z32CGT-200 | 0 | Renesas Electronics | ||
3 | SST26VF016B-104V/SM | 0 | Renesas Electronics | ||
4 | GS8342T18BGD-250 | 0 | Renesas Electronics | ||
5 | GS881E36CD-250 | 0 | Renesas Electronics | ||
6 | GS8342T36BD-250I | 0 | Renesas Electronics | ||
7 | S34MS04G200TFI000 | 0 | Renesas Electronics | ||
8 | GS81302Q19AGD-333 | 0 | Renesas Electronics | ||
9 | BR24T64FJ-WE2 | NA | 2500 | Renesas Electronics | |
10 | BU9847GUL-WE2 | NA | 100 | Renesas Electronics | |
11 | GS881E18CGT-150 | 0 | Renesas Electronics | ||
12 | GS8342D10BGD-333I | 0 | Renesas Electronics | ||
13 | SST39VF3201B-70-4I-B3KE | 0 | Renesas Electronics | ||
14 | IS42S83200J-6TL | 0 | Renesas Electronics | ||
15 | GS81302Q37AGD-375I | 0 | Renesas Electronics | ||
16 | BR24S08F-WE2 | NA | 100 | Renesas Electronics | |
17 | S34ML04G100TFV0C3 | 0 | Renesas Electronics | ||
18 | SST25PF040B-80-4E-S2AE | 0 | Renesas Electronics | ||
19 | S25FL128SAGMFB000 | 0 | Renesas Electronics | ||
20 | BR24G16NUX-3TTR | NA | 200 | Renesas Electronics |