制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 1 Mbit |
组织 | Organization | 128 k x 8 |
访问时间 | Access Time | 12 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 5.5 V |
电源电压-最小 | Supply Voltage_Min | 4.5 V |
电源电流—最大值 | Supply Current_Max | 160 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | SOJ-32 |
封装 | Packaging | Tube |
高度 | Height | 2.67 mm |
长度 | Length | 21.95 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71024 |
类型 | Type | Asynchronous |
宽度 | Width | 7.6 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 23 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS8182D09BD-200I | 0 | Renesas Electronics | ||
2 | 71016S15YGI8 | 0 | Renesas Electronics | ||
3 | CY7C1354CV25-166AXC | 210913 | 42 | Renesas Electronics | |
4 | GS816036DGT-250V | 0 | Renesas Electronics | ||
5 | 7205L12JG8 | 0 | Renesas Electronics | ||
6 | GS8342S09BD-333I | 0 | Renesas Electronics | ||
7 | 93AA86CT-I/MC | 0 | Renesas Electronics | ||
8 | GS8640Z36GT-167 | 0 | Renesas Electronics | ||
9 | AT24CS04-STUM-T | 0 | Renesas Electronics | ||
10 | 72V231L15PFGI | 100 | Renesas Electronics | ||
11 | GS8321E18AGD-250I | 0 | Renesas Electronics | ||
12 | CY7C1512KV18-250BZI | 0 | Renesas Electronics | ||
13 | GS8161E36DGT-150IV | 0 | Renesas Electronics | ||
14 | IS43LR32160C-6BLI | 0 | Renesas Electronics | ||
15 | W631GU8MB15I | 0 | Renesas Electronics | ||
16 | AT25DF041B-MHN-T | 0 | Renesas Electronics | ||
17 | W631GU8MB-09 | 0 | Renesas Electronics | ||
18 | GS8342DT38BD-400I | 0 | Renesas Electronics | ||
19 | GS81302T20AGD-500 | 0 | Renesas Electronics | ||
20 | GS816032DGT-333V | 0 | Renesas Electronics |