制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 1 Mbit |
组织 | Organization | 64 k x 16 |
访问时间 | Access Time | 15 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 5.5 V |
电源电压-最小 | Supply Voltage_Min | 4.5 V |
电源电流—最大值 | Supply Current_Max | 180 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | SOJ-44 |
封装 | Packaging | Tube |
高度 | Height | 2.9 mm |
长度 | Length | 28.6 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71016 |
类型 | Type | Asynchronous |
宽度 | Width | 10.2 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 16 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS816218DGD-250V | 0 | Renesas Electronics | ||
2 | GS8342D38BGD-450I | 0 | Renesas Electronics | ||
3 | 24LC04BT-I/ST | 2012 | 2391 | Renesas Electronics | |
4 | GS8342T36BGD-300 | 0 | Renesas Electronics | ||
5 | GS8182D09BGD-167 | 0 | Renesas Electronics | ||
6 | MT29F2G08ABAEAH4-IT:E | 17+ | 9000 | Renesas Electronics | |
7 | GS8342DT06BGD-450I | 0 | Renesas Electronics | ||
8 | GS8182R36BD-300I | 0 | Renesas Electronics | ||
9 | GS8161Z36DGD-200I | 0 | Renesas Electronics | ||
10 | CY7C1474V33-167BGC | 0 | Renesas Electronics | ||
11 | AT45DB161E-SHFHC-T | 0 | Renesas Electronics | ||
12 | S29GL128P11FFIS30 | 0 | Renesas Electronics | ||
13 | GS882Z36CD-150I | 0 | Renesas Electronics | ||
14 | GS832218AGD-250I | 0 | Renesas Electronics | ||
15 | BR24G32FV-3GTE2 | NA | 100 | Renesas Electronics | |
16 | S29GL01GS11TFI020 | 0 | Renesas Electronics | ||
17 | 48L640T-I/SN | 0 | Renesas Electronics | ||
18 | 24LC128-E/SM | 0 | Renesas Electronics | ||
19 | 71024S20YG | 0 | Renesas Electronics | ||
20 | IS41LV16100D-50TLI-TR | 0 | Renesas Electronics |