制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 4 Mbit |
组织 | Organization | 256 k x 18 |
访问时间 | Access Time | 12 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.45 V |
电源电压-最小 | Supply Voltage_Min | 3.15 V |
电源电流—最大值 | Supply Current_Max | 515 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | CABGA-208 |
封装 | Packaging | Tray |
高度 | Height | 1.4 mm |
长度 | Length | 15 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 70V631 |
类型 | Type | Asynchronous |
宽度 | Width | 15 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 7 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 72V3650L6BB8 | 0 | Renesas Electronics | ||
2 | GS8673ED19BK-625M | 0 | Renesas Electronics | ||
3 | GS8672Q18BE-200I | 0 | Renesas Electronics | ||
4 | MT53E768M32D4DT-046 WT:E TR | 0 | Renesas Electronics | ||
5 | MT53E512M32D2FW-053 AUT:D | 0 | Renesas Electronics | ||
6 | W25Q40CLSNIG | 327 | Renesas Electronics | ||
7 | 24LC02BT-E/LT | 0 | Renesas Electronics | ||
8 | 71V016SA10PHG | 0 | Renesas Electronics | ||
9 | SFUI4096J1AE2TO-C-QT-2A1-STD | 0 | Renesas Electronics | ||
10 | MT53E1G32D4NQ-046 WT:E TR | 0 | Renesas Electronics | ||
11 | IS25LP032D-JKLE | 0 | Renesas Electronics | ||
12 | MT35XL512ABA2G12-0AAT | 0 | Renesas Electronics | ||
13 | S25FL512SDPMFIG13 | 0 | Renesas Electronics | ||
14 | AS7C1025B-10TJCN | 0 | Renesas Electronics | ||
15 | GS8321E36AD-250 | 0 | Renesas Electronics | ||
16 | 71V25761S200BG8 | 0 | Renesas Electronics | ||
17 | 24LC02BH-E/ST | 0 | Renesas Electronics | ||
18 | GS81302DT07E-333 | 0 | Renesas Electronics | ||
19 | AS6C6264-55SIN | 19+ | 250 | Renesas Electronics | |
20 | 24LC02BT-I/ST | 0 | Renesas Electronics |