制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 4 Mbit |
组织 | Organization | 128 k x 36 |
访问时间 | Access Time | 25 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.45 V |
电源电压-最小 | Supply Voltage_Min | 3.15 V |
电源电流—最大值 | Supply Current_Max | 480 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | CABGA-256 |
封装 | Packaging | Tray |
高度 | Height | 1.4 mm |
长度 | Length | 17 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 70V3599 |
类型 | Type | Synchronous |
宽度 | Width | 17 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 6 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | SST39VF040-70-4I-NHE-T | 0 | Renesas Electronics | ||
2 | CY7C1612KV18-250BZXC | 0 | Renesas Electronics | ||
3 | CY62167EV30LL-45BVXAT | 0 | Renesas Electronics | ||
4 | S34MS08G201BHB000 | 0 | Renesas Electronics | ||
5 | 25LC512T-E/MF | 0 | Renesas Electronics | ||
6 | AP-UM001GR31CG-2MSNRT | 0 | Renesas Electronics | ||
7 | GS8320E18AGT-200I | 0 | Renesas Electronics | ||
8 | S29AS016J70BFI040A | 0 | Renesas Electronics | ||
9 | S25FS256SAGBHI300 | 0 | Renesas Electronics | ||
10 | BR24C02-WMN6TP | 0 | Renesas Electronics | ||
11 | 24AA1026T-I/SN | 0 | Renesas Electronics | ||
12 | IS43R16160D-6BLI | 0 | Renesas Electronics | ||
13 | 24AA1026-I/SN | 0 | Renesas Electronics | ||
14 | GS81302Q10GE-318 | 0 | Renesas Electronics | ||
15 | GS8662R09BD-400I | 0 | Renesas Electronics | ||
16 | GS8672T19BGE-450I | 0 | Renesas Electronics | ||
17 | AS4C4M16SA-6TIN | 150 | Renesas Electronics | ||
18 | BR25H010FJ-2CE2 | NA | 100 | Renesas Electronics | |
19 | GD25Q20CSIG | 0 | Renesas Electronics | ||
20 | GS8321E32AD-150 | 0 | Renesas Electronics |