制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 2 Mbit |
组织 | Organization | 128 k x 18 |
访问时间 | Access Time | 4.2 ns |
最大时钟频率 | Maximum Clock Frequency | 133 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.45 V |
电源电压-最小 | Supply Voltage_Min | 3.15 V |
电源电流—最大值 | Supply Current_Max | 400 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | CABGA-208 |
封装 | Packaging | Tray |
高度 | Height | 1.4 mm |
长度 | Length | 15 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 70V3399S133 |
类型 | Type | Synchronous |
宽度 | Width | 15 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 7 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | BR25L160FVT-WE2 | 0 | Renesas Electronics | ||
2 | CY7C1069G-10ZSXIT | 0 | Renesas Electronics | ||
3 | 71V3557S75BG8 | 0 | Renesas Electronics | ||
4 | MT29F256G08EBHAFB16A3WEA | 0 | Renesas Electronics | ||
5 | 7284L15PAGI8 | 0 | Renesas Electronics | ||
6 | MT53D768M64D8SQ-053 WT:E | 0 | Renesas Electronics | ||
7 | S29GL512S10TFI010 | 2210 | 91 | Renesas Electronics | |
8 | IS64LV25616AL-12BLA3 | 0 | Renesas Electronics | ||
9 | AT25DL081-SSHN-T | 2年内 | 10000 | Renesas Electronics | |
10 | BR25G320F-3GE2 | NA | 220 | Renesas Electronics | |
11 | GS81302D20E-350I | 0 | Renesas Electronics | ||
12 | S25HL02GTDPBHV050 | 0 | Renesas Electronics | ||
13 | 24LC32A-E/P | 0 | Renesas Electronics | ||
14 | 93C56BT-E/ST | 0 | Renesas Electronics | ||
15 | 71V65703S75BQG8 | 0 | Renesas Electronics | ||
16 | IS61QDP2B42M36A-400M3L | 0 | Renesas Electronics | ||
17 | 24LC04B/SN | 0 | Renesas Electronics | ||
18 | GS8182R08BD-167 | 0 | Renesas Electronics | ||
19 | MT48LC8M16A2B4-6A AAT:L | 0 | Renesas Electronics | ||
20 | M24C02-DRDW3TP/K | 0 | Renesas Electronics |