制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 1 Mbit |
组织 | Organization | 64 k x 18 |
访问时间 | Access Time | 5 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.45 V |
电源电压-最小 | Supply Voltage_Min | 3.15 V |
电源电流—最大值 | Supply Current_Max | 360 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | CABGA-256 |
封装 | Packaging | Tray |
高度 | Height | 1.4 mm |
长度 | Length | 17 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 70V3389S5 |
类型 | Type | Synchronous |
宽度 | Width | 17 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 6 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | IS42S32800J-6BLI | n/a | 168 | Renesas Electronics | |
2 | 24CS512T-E/ST | 0 | Renesas Electronics | ||
3 | SST26WF080BA-104I/MF | 0 | Renesas Electronics | ||
4 | 6116SA25SOG | 0 | Renesas Electronics | ||
5 | MT29F8G08ABACAWP-IT:C | 两年内 | 193 | Renesas Electronics | |
6 | 24CW640T-I/CS1668 | 0 | Renesas Electronics | ||
7 | SDINBDG4-32G-XA | 2234 | 193 | Renesas Electronics | |
8 | 24LC024-E/MS | 0 | Renesas Electronics | ||
9 | 72211L10PFG8 | 0 | Renesas Electronics | ||
10 | GS8662D07BGD-450I | 0 | Renesas Electronics | ||
11 | AS4C64M16D3B-12BINTR | 0 | Renesas Electronics | ||
12 | 7208L25JGI8 | 0 | Renesas Electronics | ||
13 | GS832272C-250IV | 0 | Renesas Electronics | ||
14 | W631GG8MB09I TR | 0 | Renesas Electronics | ||
15 | 71V424L10YG | 0 | Renesas Electronics | ||
16 | GS88032CGT-200IV | 0 | Renesas Electronics | ||
17 | 34AA02T-I/MNY | 0 | Renesas Electronics | ||
18 | GS8321Z36AGD-333I | 0 | Renesas Electronics | ||
19 | 24FC08T-E/SN | 0 | Renesas Electronics | ||
20 | IS43TR16128BL-15HBLI-TR | 0 | Renesas Electronics |