制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 128 kbit |
组织 | Organization | 8 k x 16 |
访问时间 | Access Time | 25 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 3 V |
电源电流—最大值 | Supply Current_Max | 180 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Reel |
高度 | Height | 1.4 mm |
长度 | Length | 14 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 70V25L25 |
类型 | Type | Asynchronous |
宽度 | Width | 14 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 750 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | S25FL256SAGMFV013 | 0 | Renesas Electronics | ||
2 | CY14B101LA-ZS45XI | 0 | Renesas Electronics | ||
3 | IS43LR16640A-5BL-TR | 0 | Renesas Electronics | ||
4 | CY7C25632KV18-450BZC | 0 | Renesas Electronics | ||
5 | IS43TR16K01S2L-125KBLI | 0 | Renesas Electronics | ||
6 | MT29F4G08ABAFAH4-AAT:F TR | 0 | Renesas Electronics | ||
7 | GS8662D06BD-550 | 0 | Renesas Electronics | ||
8 | GS8662QT19BGD-333 | 0 | Renesas Electronics | ||
9 | GS8342T10BD-333 | 0 | Renesas Electronics | ||
10 | 40060325-002 | 0 | Renesas Electronics | ||
11 | SST25VF010A-33-4C-SAE-T | 0 | Renesas Electronics | ||
12 | W63AH2NBVACI | 0 | Renesas Electronics | ||
13 | S29JL064J60BHA000 | 0 | Renesas Electronics | ||
14 | IS46R16320D-6BLA1-TR | 0 | Renesas Electronics | ||
15 | GS81302S18E-333I | 0 | Renesas Electronics | ||
16 | S25FL256SAGMFVG03 | 0 | Renesas Electronics | ||
17 | GS8161Z36DGD-375 | 0 | Renesas Electronics | ||
18 | GS81302Q18E-300M | 0 | Renesas Electronics | ||
19 | GS832272C-133I | 0 | Renesas Electronics | ||
20 | MR5A16AUYS45R | 0 | Renesas Electronics |