制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 128 kbit |
组织 | Organization | 16 k x 8 |
访问时间 | Access Time | 20 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 3 V |
电源电流—最大值 | Supply Current_Max | 195 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-64 |
封装 | Packaging | Reel |
高度 | Height | 1.4 mm |
长度 | Length | 14 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 70V06L20 |
类型 | Type | Asynchronous |
宽度 | Width | 14 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 750 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS81313LQ18GK-714 | 0 | Renesas Electronics | ||
2 | IS62WV12816EALL-55BLI | 1940 | 1416 | Renesas Electronics | |
3 | MT29F8T08GULBEM4:B | 0 | Renesas Electronics | ||
4 | 70V3589S166BC | 0 | Renesas Electronics | ||
5 | GS8162Z72CC-200V | 0 | Renesas Electronics | ||
6 | GS81302DT06E-500 | 0 | Renesas Electronics | ||
7 | MT29F4G08ABAFAWP-AATES:F TR | 0 | Renesas Electronics | ||
8 | GS8662Q10BD-333 | 0 | Renesas Electronics | ||
9 | GD25B127CWIGR | 0 | Renesas Electronics | ||
10 | MT29F16G08ABCCBH1-AAT:C | 0 | Renesas Electronics | ||
11 | 70V3319S133BCI8 | 0 | Renesas Electronics | ||
12 | 24AA04T/SN | 0 | Renesas Electronics | ||
13 | IS42S32400F-6TL | 0 | Renesas Electronics | ||
14 | IS29GL128-70FLEB-TR | 0 | Renesas Electronics | ||
15 | AT28C64B-15JU-235 | 0 | Renesas Electronics | ||
16 | IS25LP032D-JBLE | 134 | Renesas Electronics | ||
17 | CY14B101LA-ZS25XIT | 0 | Renesas Electronics | ||
18 | SST25VF020-20-4I-QAE-T | 0 | Renesas Electronics | ||
19 | MT42L64M32D2HE-18 AUT:D TR | 22+ | 62500 | Renesas Electronics | |
20 | GD25S512MDYIGR | 0 | Renesas Electronics |