制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 512 k x 36 |
访问时间 | Access Time | 4.2 ns |
最大时钟频率 | Maximum Clock Frequency | 133 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.6 V |
电源电压-最小 | Supply Voltage_Min | 2.4 V |
电源电流—最大值 | Supply Current_Max | 900 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | CABGA-256 |
封装 | Packaging | Tray |
高度 | Height | 1.4 mm |
长度 | Length | 17 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 70T3539M |
类型 | Type | Synchronous |
宽度 | Width | 17 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 6 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS8342T37BD-350I | 0 | Renesas Electronics | ||
2 | IS25LP128-JGLE | 0 | Renesas Electronics | ||
3 | AT24C08C-MAHM-T | 1742 | 11157 | Renesas Electronics | |
4 | GS816236DGD-150V | 0 | Renesas Electronics | ||
5 | S34ML02G100BHV000 | 0 | Renesas Electronics | ||
6 | S25FL128SDPMFB010 | 0 | Renesas Electronics | ||
7 | GS8342DT07BGD-333I | 0 | Renesas Electronics | ||
8 | GS88236CGB-150 | 0 | Renesas Electronics | ||
9 | MT48LC16M16A2P-6A XIT:G | 0 | Renesas Electronics | ||
10 | S29GL512S12TFIV20 | 0 | Renesas Electronics | ||
11 | CAT24C08YI-G | 0 | Renesas Electronics | ||
12 | AT45DB021E-SSHNHA-T | 0 | Renesas Electronics | ||
13 | GS816118DGD-200IV | 0 | Renesas Electronics | ||
14 | GS8342DT10BGD-300 | 0 | Renesas Electronics | ||
15 | GS88032CGT-300 | 0 | Renesas Electronics | ||
16 | S29GL064S80FHIV20 | 0 | Renesas Electronics | ||
17 | GS8342D10BGD-450 | 0 | Renesas Electronics | ||
18 | 93AA56BT-I/MC | 0 | Renesas Electronics | ||
19 | GS864436GE-200I | 0 | Renesas Electronics | ||
20 | S-24C128CI-T8T1U3 | 0 | Renesas Electronics |