制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 512 k x 18 |
访问时间 | Access Time | 3.4 ns |
最大时钟频率 | Maximum Clock Frequency | 200 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.6 V |
电源电压-最小 | Supply Voltage_Min | 2.4 V |
电源电流—最大值 | Supply Current_Max | 525 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | CABGA-256 |
封装 | Packaging | Tray |
高度 | Height | 1.4 mm |
长度 | Length | 17 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 70T3339S200 |
类型 | Type | Synchronous |
宽度 | Width | 17 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 6 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 24FC01T-E/MS | 0 | Renesas Electronics | ||
2 | GS880Z36CGT-200I | 0 | Renesas Electronics | ||
3 | 24FC128-I/MS | 0 | Renesas Electronics | ||
4 | CY14B104NA-ZS25XE | 0 | Renesas Electronics | ||
5 | GS8182D19BD-400I | 0 | Renesas Electronics | ||
6 | 70V25S25PFGI | 0 | Renesas Electronics | ||
7 | BR24T02NUX-WGTR | 0 | Renesas Electronics | ||
8 | 25AA080B-I/P | 0 | Renesas Electronics | ||
9 | W979H2KBVX1I | 0 | Renesas Electronics | ||
10 | 93C56A-I/P | 0 | Renesas Electronics | ||
11 | GS881Z32CGD-333 | 0 | Renesas Electronics | ||
12 | M24C04-DRDW8TP/K | 0 | Renesas Electronics | ||
13 | GS81282Z36GD-200V | 0 | Renesas Electronics | ||
14 | GS8342DT11BGD-400I | 0 | Renesas Electronics | ||
15 | 93LC56CX-I/SN | 0 | Renesas Electronics | ||
16 | 71V67703S85PFGI | 0 | Renesas Electronics | ||
17 | GS8182D18BGD-200I | 0 | Renesas Electronics | ||
18 | 71024S15TYG8 | 0 | Renesas Electronics | ||
19 | GS8162Z36DD-333IV | 0 | Renesas Electronics | ||
20 | GS816236DGD-200IV | 0 | Renesas Electronics |