制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 128 kbit |
组织 | Organization | 8 k x 16 |
访问时间 | Access Time | 25 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 5.5 V |
电源电压-最小 | Supply Voltage_Min | 4.5 V |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | PGA-84 |
封装 | Packaging | Tray |
高度 | Height | 3.68 mm |
长度 | Length | 27.94 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 7025S25 |
类型 | Type | Asynchronous |
宽度 | Width | 27.94 mm |
商标 | Brand | Renesas / IDT |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 3 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | IS42S86400F-6TL-TR | 0 | Renesas Electronics | ||
2 | 71V65803S150BQI8 | 0 | Renesas Electronics | ||
3 | S99ML01G20020 | 0 | Renesas Electronics | ||
4 | 71V416S15BEGI | 0 | Renesas Electronics | ||
5 | W972GG8KB-18 TR | 0 | Renesas Electronics | ||
6 | GS81302TT37GE-333 | 0 | Renesas Electronics | ||
7 | TC58NVG0S3HTAI0 | 22+ | 650 | Renesas Electronics | |
8 | GS71116AGU-12E | 0 | Renesas Electronics | ||
9 | MT53D512M64D4FL-046 XT:F | 0 | Renesas Electronics | ||
10 | MT53B4DCNY-DC | 0 | Renesas Electronics | ||
11 | AS6C1008-55STINL | 0 | Renesas Electronics | ||
12 | IS46R16320E-6TLA2 | 0 | Renesas Electronics | ||
13 | IS25WP256D-JLLA3-TR | 0 | Renesas Electronics | ||
14 | SST26VF064BEUI-104I/MF | 0 | Renesas Electronics | ||
15 | AT45DB161E-SSHF2B-T | 201834 | 40 | Renesas Electronics | |
16 | IS42SM32800K-75BLI-TR | 0 | Renesas Electronics | ||
17 | 24AA00T-I/MC | 0 | Renesas Electronics | ||
18 | 71V256SA12YGI | 0 | Renesas Electronics | ||
19 | CY62148ELL-55SXI | 4 | Renesas Electronics | ||
20 | GS8342Q36BD-357 | 0 | Renesas Electronics |