制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 36 kbit |
组织 | Organization | 4 k x 9 |
访问时间 | Access Time | 12 ns |
电源电压-最大 | Supply Voltage_Max | 5.5 V |
电源电压-最小 | Supply Voltage_Min | 4.5 V |
电源电流—最大值 | Supply Current_Max | 250 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | PLCC-52 |
封装 | Packaging | Tube |
高度 | Height | 3.63 mm |
长度 | Length | 19 mm |
存储类型 | Memory Type | SRAM |
系列 | Series | 7014S12 |
类型 | Type | High Speed Standard Power Dual Port Static RAM |
宽度 | Width | 19 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 12 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS8662DT20BD-550I | 0 | Renesas Electronics | ||
2 | GD25Q20CTIG | 0 | Renesas Electronics | ||
3 | GS81302QT37E-250I | 0 | Renesas Electronics | ||
4 | S34ML04G200TFV003 | 0 | Renesas Electronics | ||
5 | FM28V020-XW11 | 0 | Renesas Electronics | ||
6 | MT53E1024M32D4DE-046 AAT:D | 0 | Renesas Electronics | ||
7 | GS81302Q36E-300M | 0 | Renesas Electronics | ||
8 | M24C16-DRMN8TP/K | 9317 | Renesas Electronics | ||
9 | GS8342TT19BD-450 | 0 | Renesas Electronics | ||
10 | GS8662T36BGD-300I | 0 | Renesas Electronics | ||
11 | GS88218CD-250IV | 0 | Renesas Electronics | ||
12 | GS8662Q10BD-200 | 0 | Renesas Electronics | ||
13 | IS26KL128S-DABLI00 | 0 | Renesas Electronics | ||
14 | S25HL01GTFABHB030 | 0 | Renesas Electronics | ||
15 | FM24CL64B-DGTR | 0 | Renesas Electronics | ||
16 | GS8322Z72C-133 | 0 | Renesas Electronics | ||
17 | GS8662TT10BD-400 | 0 | Renesas Electronics | ||
18 | GS8673ED36BGK-500I | 0 | Renesas Electronics | ||
19 | S29GL128S10GHB010 | 0 | Renesas Electronics | ||
20 | MR5A16AMA35R | 0 | Renesas Electronics |