制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 128 kbit |
组织 | Organization | 16 k x 8 |
访问时间 | Access Time | 25 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 5.5 V |
电源电压-最小 | Supply Voltage_Min | 4.5 V |
电源电流—最大值 | Supply Current_Max | 265 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | PGA-68 |
封装 | Packaging | Tray |
高度 | Height | 3.68 mm |
长度 | Length | 29.46 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 7006S25 |
类型 | Type | Asynchronous |
宽度 | Width | 29.46 mm |
商标 | Brand | Renesas / IDT |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 3 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 71V65903S85BGG | 0 | Renesas Electronics | ||
2 | GS81302R36E-333I | 0 | Renesas Electronics | ||
3 | 25AA160DT-I/MNY | 0 | Renesas Electronics | ||
4 | GS81302TT38AGD-500I | 0 | Renesas Electronics | ||
5 | PM8032D-F3EI | 0 | Renesas Electronics | ||
6 | CY62137EV30LL-45ZSXIT | 0 | Renesas Electronics | ||
7 | IS42SM32400H-6BLI-TR | 0 | Renesas Electronics | ||
8 | GS8662DT19BGD-300I | 0 | Renesas Electronics | ||
9 | TC58BVG2S0HTAI0 | 0 | Renesas Electronics | ||
10 | W972GG8KB-18 | 0 | Renesas Electronics | ||
11 | GS8321Z32AD-333I | 0 | Renesas Electronics | ||
12 | GD5F4GQ6UE9IHR | 0 | Renesas Electronics | ||
13 | 24AA256T-I/MS | 2110 | 0 | Renesas Electronics | |
14 | IS64WV10248EEBLL-10CTLA3 | 2023/3/16 | 535 | Renesas Electronics | |
15 | IS61WV10248EEBLL-10TLI-TR | 0 | Renesas Electronics | ||
16 | GS8662T11BGD-350I | 0 | Renesas Electronics | ||
17 | GS8662DT10BD-300 | 0 | Renesas Electronics | ||
18 | MTFC16GAKAEJP-AIT | 0 | Renesas Electronics | ||
19 | GD25LB256EYIGR | 2827 | Renesas Electronics | ||
20 | GS8662TT20BGD-500 | 0 | Renesas Electronics |