制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 64 kbit |
组织 | Organization | 8 k x 8 |
访问时间 | Access Time | 25 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 5.5 V |
电源电压-最小 | Supply Voltage_Min | 4.5 V |
电源电流—最大值 | Supply Current_Max | 280 mA |
最小工作温度 | Minimum Operating Temperature | - 55 C |
最大工作温度 | Maximum Operating Temperature | + 125 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | PGA-68 |
封装 | Packaging | Tray |
高度 | Height | 3.68 mm |
长度 | Length | 29.46 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 7005L25 |
类型 | Type | Asynchronous |
宽度 | Width | 29.46 mm |
商标 | Brand | Renesas / IDT |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 3 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | W987D2HBJX6E | 0 | Renesas Electronics | ||
2 | 24LC16BT-I/ST | 0 | Renesas Electronics | ||
3 | IS62WV25616BLL-55BLI-TR | 0 | Renesas Electronics | ||
4 | SST39VF401C-70-4C-B3KE-T | 0 | Renesas Electronics | ||
5 | MT41K64M16TW-107 AUT:J TR | 0 | Renesas Electronics | ||
6 | 72V3670L6PFG8 | 0 | Renesas Electronics | ||
7 | GS8128418GB-167 | 0 | Renesas Electronics | ||
8 | S29GL512T10FHI010 | 0 | Renesas Electronics | ||
9 | GS8662S18BD-333 | 0 | Renesas Electronics | ||
10 | 7204L12SOG | 0 | Renesas Electronics | ||
11 | GS8672T36BGE-400 | 0 | Renesas Electronics | ||
12 | 72T18125L10BB | 0 | Renesas Electronics | ||
13 | GS816136DD-400 | 0 | Renesas Electronics | ||
14 | 71V424L12YGI8 | 0 | Renesas Electronics | ||
15 | 25LC128-E/P | 0 | Renesas Electronics | ||
16 | 70T651S10BFGI | 0 | Renesas Electronics | ||
17 | MT40A512M16LY-062E AAT:E TR | 0 | Renesas Electronics | ||
18 | IS66WVE2M16EBLL-70BLI | 0 | Renesas Electronics | ||
19 | 71V25761S166PFG8 | 0 | Renesas Electronics | ||
20 | 70V3599S166BF8 | 0 | Renesas Electronics |