制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 16 kbit |
组织 | Organization | 2 k x 8 |
访问时间 | Access Time | 25 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 5.5 V |
电源电压-最小 | Supply Voltage_Min | 4.5 V |
电源电流—最大值 | Supply Current_Max | 95 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | SOIC-24 |
封装 | Packaging | Tube |
高度 | Height | 2.34 mm |
长度 | Length | 15.4 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 6116 |
类型 | Type | Asynchronous |
宽度 | Width | 7.6 mm |
商标 | Brand | Renesas / IDT |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 310 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | EDF4432ACPE-GD-F-D | 0 | Renesas Electronics | ||
2 | MT53E1536M32D4DE-046 AAT:B | 0 | Renesas Electronics | ||
3 | MT29F256G08EBHAFB16A3WC1-R | 0 | Renesas Electronics | ||
4 | GS81302D18AGD-300I | 0 | Renesas Electronics | ||
5 | 71V3559S85PFG8 | 0 | Renesas Electronics | ||
6 | S25FL128SAGBHIC10 | 0 | Renesas Electronics | ||
7 | GS8672D20BE-500M | 0 | Renesas Electronics | ||
8 | MT47H128M16RT-25E AAT:C TR | 0 | Renesas Electronics | ||
9 | GS81302TT10E-450I | 0 | Renesas Electronics | ||
10 | 70V3319S133BCI8 | 0 | Renesas Electronics | ||
11 | MTFC64GASAQEA-WT | 0 | Renesas Electronics | ||
12 | GS81302TT20GE-500 | 0 | Renesas Electronics | ||
13 | 7206L30LB8 | 0 | Renesas Electronics | ||
14 | SST39VF800A-70-4I-EKE | 0 | Renesas Electronics | ||
15 | IS43LD16128B-18BL | 0 | Renesas Electronics | ||
16 | GS8321E18AD-375 | 0 | Renesas Electronics | ||
17 | 71V67903S80BG | 0 | Renesas Electronics | ||
18 | S25FL512SAGBHIS13 | 0 | Renesas Electronics | ||
19 | CY7C1470BV33-250BZXC | 0 | Renesas Electronics | ||
20 | GS82582Q20GE-500 | 0 | Renesas Electronics |