制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 128 kbit |
组织 | Organization | 8 k x 16 |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 5.5 V |
电源电压-最小 | Supply Voltage_Min | 4.5 V |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | FPACK-84 |
封装 | Packaging | Tray |
高度 | Height | 2.54 mm |
长度 | Length | 29.2 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 5962-91617 |
类型 | Type | Asynchronous |
宽度 | Width | 29.21 mm |
商标 | Brand | Renesas / IDT |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 6 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 71V67903S80PFG8 | 0 | Renesas Electronics | ||
2 | GS8642Z36B-250I | 0 | Renesas Electronics | ||
3 | IS43DR86400C-3DBI | 0 | Renesas Electronics | ||
4 | GS882Z18CD-200 | 0 | Renesas Electronics | ||
5 | GS8662DT07BD-400 | 0 | Renesas Electronics | ||
6 | IS42S16160J-6BL-TR | 0 | Renesas Electronics | ||
7 | AT45DB021E-UUN-T | 0 | Renesas Electronics | ||
8 | CAT25160VI-G | 0 | Renesas Electronics | ||
9 | S34ML04G200TFV000 | 2-3年 | 379 | Renesas Electronics | |
10 | MT29F2G08ABAGAWP-ITE:G TR | 0 | Renesas Electronics | ||
11 | GS82582T19GE-333I | 0 | Renesas Electronics | ||
12 | IS61NLF25636A-7.5TQLI-TR | 0 | Renesas Electronics | ||
13 | S29GL512S12TFIV10 | 0 | Renesas Electronics | ||
14 | GS816136DGD-400 | 0 | Renesas Electronics | ||
15 | S25FS128SAGNFM103 | 0 | Renesas Electronics | ||
16 | GS8321E32AD-250IV | 0 | Renesas Electronics | ||
17 | 93C56A-E/P | 0 | Renesas Electronics | ||
18 | MT29GZ6A6BPIET-046AAT.112 | 0 | Renesas Electronics | ||
19 | GLS55VD020-60-I-TQWE | 0 | Renesas Electronics | ||
20 | IS66WVH16M8BLL-100B1LI | 0 | Renesas Electronics |