制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 64 kbit |
组织 | Organization | 8 k x 8 |
访问时间 | Access Time | 55 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 5.5 V |
电源电压-最小 | Supply Voltage_Min | 4.5 V |
电源电流—最大值 | Supply Current_Max | 200 mA |
最小工作温度 | Minimum Operating Temperature | - 55 C |
最大工作温度 | Maximum Operating Temperature | + 125 C |
安装风格 | Mounting Style | Through Hole |
封装 / 箱体 | Package_Case | CDIP-28 |
封装 | Packaging | Tube |
高度 | Height | 1.65 mm |
长度 | Length | 37.2 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 5962-38294 |
类型 | Type | Asynchronous |
宽度 | Width | 15.24 mm |
商标 | Brand | Renesas / IDT |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 13 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS82582D21GE-633S | 0 | Renesas Electronics | ||
2 | BQ2204ASN | 0 | Renesas Electronics | ||
3 | GLS85LS1064B-M-I-FZJE-ND105 | 0 | Renesas Electronics | ||
4 | MT62F1G32D4DS-031 WT:B | 0 | Renesas Electronics | ||
5 | GS8256418GB-200I | 0 | Renesas Electronics | ||
6 | IS49NLC96400A-33WBL | 0 | Renesas Electronics | ||
7 | IS65LV256AL-45TLA3-TR | 0 | Renesas Electronics | ||
8 | S25FS512SDSNFI010 | 0 | Renesas Electronics | ||
9 | GS8322Z36AB-200I | 0 | Renesas Electronics | ||
10 | GS8662D11BD-550 | 0 | Renesas Electronics | ||
11 | 71V3557S85BG | 0 | Renesas Electronics | ||
12 | GS8342D11BGD-550I | 0 | Renesas Electronics | ||
13 | MT53D4DBBD-DC | 0 | Renesas Electronics | ||
14 | AP-UM512MR13CS-2MHNRT | 0 | Renesas Electronics | ||
15 | NV25M01DTUTG | 0 | Renesas Electronics | ||
16 | IS45S32800D-6BLA1-TR | 0 | Renesas Electronics | ||
17 | AT24CW1280-MAHR-T | 0 | Renesas Electronics | ||
18 | S28HL512TFPBHI013 | 0 | Renesas Electronics | ||
19 | AT88SC0404CA-MJTG | 0 | Renesas Electronics | ||
20 | S29PL064J60BFW073 | 0 | Renesas Electronics |