制造商 | Manufacturer | Micron Technology |
RoHS | Rohs | Y |
类型 | Type | SDRAM Mobile - LPDDR1 |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | VFBGA-90 |
数据总线宽度 | Data Bus Width | 32 bit |
组织 | Organization | 64 M x 32 |
存储容量 | Memory Size | 2 Gbit |
最大时钟频率 | Maximum Clock Frequency | 208 MHz |
访问时间 | Access Time | 4.8 ns |
电源电压-最大 | Supply Voltage_Max | 1.95 V |
电源电压-最小 | Supply Voltage_Min | 1.7 V |
电源电流—最大值 | Supply Current_Max | 75 mA |
最小工作温度 | Minimum Operating Temperature | - 25 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
系列 | Series | MT46H |
封装 | Packaging | Tray |
商标 | Brand | Micron |
产品类型 | Product Type | DRAM |
标准包装数量 | Standard Pack Qty | 1440 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS8162Z36DB-150I | 0 | Micron Technology | ||
2 | W66BM6NBUAFI | 0 | Micron Technology | ||
3 | GS8161E18DGD-200 | 0 | Micron Technology | ||
4 | GS8182S09BD-333 | 0 | Micron Technology | ||
5 | GS832036AGT-150V | 0 | Micron Technology | ||
6 | S25FS256SAGBHV200 | 0 | Micron Technology | ||
7 | GS881E18CGT-333 | 0 | Micron Technology | ||
8 | GS8182R08BD-167I | 0 | Micron Technology | ||
9 | IS42S32200L-6BL | 0 | Micron Technology | ||
10 | 25AA080AT-I/MS | 0 | Micron Technology | ||
11 | GS8342T06BD-400I | 0 | Micron Technology | ||
12 | W25Q32JVSNIQ | 2023/4/15 | 17932 | Micron Technology | |
13 | GS816218DB-200IV | 0 | Micron Technology | ||
14 | S25FS128SDSMFI1D0 | 0 | Micron Technology | ||
15 | MT29F2G08ABBEAHC-IT:E TR | 0 | Micron Technology | ||
16 | MT40A1G8SA-075:E TR | 0 | Micron Technology | ||
17 | GS8342S18BGD-250 | 0 | Micron Technology | ||
18 | GS8342D38BD-350I | 0 | Micron Technology | ||
19 | 24AA00/ST | 0 | Micron Technology | ||
20 | S34ML01G100TFI9C0 | 0 | Micron Technology |