制造商 | Manufacturer | Micron Technology |
RoHS | Rohs | Y |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | VFBGA-63 |
系列 | Series | MT29F |
存储容量 | Memory Size | 1 Gbit |
接口类型 | Interface Type | Parallel |
组织 | Organization | 128 M x 8 |
定时类型 | Timing Type | Asynchronous |
数据总线宽度 | Data Bus Width | 8 bit |
电源电压-最小 | Supply Voltage_Min | 2.7 V |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电流—最大值 | Supply Current_Max | 35 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 105 C |
封装 | Packaging | Tray |
产品 | Product | NAND Flash |
商标 | Brand | Micron |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | NAND Flash |
标准包装数量 | Standard Pack Qty | 1260 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | W25Q256JVBIM TR | 0 | Micron Technology | ||
2 | 71V67603S150PFGI | 0 | Micron Technology | ||
3 | GS8662Q07BGD-300I | 0 | Micron Technology | ||
4 | M95512-DRMN8TP/K | 0 | Micron Technology | ||
5 | GS8321E32AD-150IV | 0 | Micron Technology | ||
6 | GS8662TT19BGD-450I | 0 | Micron Technology | ||
7 | IS45S16160J-6BLA1-TR | 0 | Micron Technology | ||
8 | MT53D4D1ASQ-DC | 0 | Micron Technology | ||
9 | GS88136CGD-200V | 0 | Micron Technology | ||
10 | IS62LV256AL-20JLI-TR | 0 | Micron Technology | ||
11 | BR24C02-RDS6TP | 0 | Micron Technology | ||
12 | BR24L08NUX-WTR | NA | 100 | Micron Technology | |
13 | GS8322Z18AGD-150IV | 0 | Micron Technology | ||
14 | 25LC160CT-E/MS | 0 | Micron Technology | ||
15 | GS816032DGT-333I | 0 | Micron Technology | ||
16 | GS880F36CGT-7.5IV | 0 | Micron Technology | ||
17 | MT53D1G64D8SQ-053 WT:E TR | 0 | Micron Technology | ||
18 | MT53E256M32D2DS-046 AAT ES:B TR | 0 | Micron Technology | ||
19 | CYRS16B256-133FZMB | 0 | Micron Technology | ||
20 | GS8673ET36BK-725S | 0 | Micron Technology |